5LP01C-TB-E Detailed Description
Part Number |
5LP01C-TB-E |
Part Status |
Not For New Designs |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
50V |
Current - Continuous Drain (Id) @ 25°C |
70mA (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
1.5V, 4V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
1.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
7.4pF @ 10V |
Vgs (Max) |
±10V |
FET Feature |
- |
Power Dissipation (Max) |
250mW (Ta) |
Rds On (Max) @ Id, Vgs |
23 Ohm @ 40mA, 4V |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
3-CP |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Weight |
- |
Country of Origin |
- |
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