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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › 55GN01CA-TB-E
55GN01CA-TB-E

55GN01CA-TB-E - ON Semiconductor

Part Number
55GN01CA-TB-E
Manufacturer
ON Semiconductor
Brief Description
TRANS NPN BIPOLAR 10V 70MA CP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
55GN01CA-TB-E PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
15000 pcs
Reference Price
USD 0.0846/pcs
Our Price
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55GN01CA-TB-E Detailed Description

Part Number 55GN01CA-TB-E
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 4.5GHz
Noise Figure (dB Typ @ f) 1.9dB @ 1GHz
Gain 9.5dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector (Ic) (Max) 70mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP
Weight -
Country of Origin -

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