PMZB150UNEYL - Nexperia USA Inc.

Part Number	PMZB150UNEYL
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.5V, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	93pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.5A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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PMZB300XN,315	Nexperia USA Inc.	MOSFET N-CH 20V 1A 3DFN	Details
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PMZB350UPE,315	Nexperia USA Inc.	MOSFET P-CH 20V 1A 3DFN	Details
PMZB370UNE,315	Nexperia USA Inc.	MOSFET N-CH 30V 0.9A DFN1006B-3	Details