PMZB290UNE2YL - Nexperia USA Inc.

Part Number	PMZB290UNE2YL
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.5V, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	46pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	350mW (Ta), 5.43W (Tc)
Rds On (Max) @ Id, Vgs	320 mOhm @ 1.2A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PMZB200UNEYL	Nexperia USA Inc.	MOSFET N-CH 30V SOT883	Details
PMZB290UN,315	Nexperia USA Inc.	MOSFET N-CH 20V 1A 3DFN	Details
PMZB290UNE,315	Nexperia USA Inc.	MOSFET N-CH 20V 1A DFN1006B-3	Details
PMZB290UNE2YL	Nexperia USA Inc.	MOSFET N-CH 20V 1.2A XQFN3	Details