PMV50ENEAR - Nexperia USA Inc.

Part Number	PMV50ENEAR
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	276pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	510mW (Ta), 3.9W (Tc)
Rds On (Max) @ Id, Vgs	43 mOhm @ 3.9A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB (SOT23)
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PMV50ENEAR	Nexperia USA Inc.	MOSFET N-CH 30V TO-236AB	Details
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PMV50UPEVL	Nexperia USA Inc.	MOSFET P-CH 20V 3.7A TO236AB	Details
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