PDTA123ETVL - Nexperia USA Inc.

Part Number	PDTA123ETVL
Part Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	-
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	-
Power - Max	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PDTA113EE,115	NXP USA Inc.	TRANS PREBIAS PNP 150MW SC75	Details
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PDTA113EM,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW SOT883	Details
PDTA113EMB,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW 3DFN	Details
PDTA113ES,126	NXP USA Inc.	TRANS PREBIAS PNP 500MW TO92-3	Details
PDTA113ET,215	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW TO236AB	Details
PDTA113EU,115	Nexperia USA Inc.	TRANS PREBIAS PNP 200MW SOT323	Details
PDTA113ZE,115	NXP USA Inc.	TRANS PREBIAS PNP 150MW SC75	Details
PDTA113ZK,115	NXP USA Inc.	TRANS PREBIAS PNP 250MW SMT3	Details
PDTA113ZM,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW SOT883	Details