JANSR2N3700UB - Microsemi Corporation

Part Number	JANSR2N3700UB
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V
Power - Max	500mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, No Lead
Supplier Device Package	UB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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JANSR2N2907AUB	Microsemi Corporation	BJTS	Details
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JANSR2N3501U4	Microsemi Corporation	BJTS	Details
JANSR2N3700UB	Microsemi Corporation	RH SMALL-SIGNAL BJT	Details
JANSR2N3810U	Microsemi Corporation	RH SMALL-SIGNAL BJT	Details