APT75GN120B2G - Microsemi Corporation

Part Number	APT75GN120B2G
Part Status	Not For New Designs
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	200A
Current - Collector Pulsed (Icm)	225A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Power - Max	833W
Switching Energy	8045µJ (on), 7640µJ (off)
Input Type	Standard
Gate Charge	425nC
Td (on/off) @ 25°C	60ns/620ns
Test Condition	800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-
Weight	-
Country of Origin	-

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APT75F50B2	Microsemi Corporation	MOSFET N-CH 500V 75A TO-247	Details
APT75F50L	Microsemi Corporation	MOSFET N-CH 500V 75A TO-264	Details
APT75GN120B2G	Microsemi Corporation	IGBT 1200V 200A 833W TMAX	Details
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