APT65GP60L2DQ2G - Microsemi Corporation

Part Number	APT65GP60L2DQ2G
Part Status	Not For New Designs
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	198A
Current - Collector Pulsed (Icm)	250A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 65A
Power - Max	833W
Switching Energy	605µJ (on), 895µJ (off)
Input Type	Standard
Gate Charge	210nC
Td (on/off) @ 25°C	30ns/90ns
Test Condition	400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	-
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT65GP60B2G	Microsemi Corporation	IGBT 600V 100A 833W TMAX	Details
APT65GP60J	Microsemi Corporation	IGBT 600V 130A 431W SOT227	Details
APT65GP60L2DQ2G	Microsemi Corporation	IGBT 600V 198A 833W TO264	Details