APT50GP60B2DQ2G - Microsemi Corporation

Part Number	APT50GP60B2DQ2G
Part Status	Not For New Designs
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	150A
Current - Collector Pulsed (Icm)	190A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Power - Max	625W
Switching Energy	465µJ (on), 635µJ (off)
Input Type	Standard
Gate Charge	165nC
Td (on/off) @ 25°C	19ns/85ns
Test Condition	400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT5010B2FLLG	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX	Details
APT5010B2LLG	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX	Details
APT5010JFLL	APT	APT5010JFLL APT SMD or Through Hole New Original Stocks	Details
APT5010JLLU2	Microsemi Corporation	MOSFET N-CH 500V 41A SOT-227	Details
APT5010JLLU3	Microsemi Corporation	MOSFET N-CH 500V 41A SOT227	Details
APT5010JN	APT	APT5010JN APT SMD or Through Hole New Original Stocks	Details
APT5010JVR	APT	APT5010JVR APT SMD or Through Hole New Original Stocks	Details
APT5010JVRU2	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227	Details
APT5010JVRU3	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227	Details
APT5010LFLLG	Microsemi Corporation	MOSFET N-CH 500V 46A TO-264	Details