APT11GF120KRG - Microsemi Corporation

Part Number	APT11GF120KRG
Part Status	Obsolete
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	25A
Current - Collector Pulsed (Icm)	44A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 8A
Power - Max	156W
Switching Energy	300µJ (on), 285µJ (off)
Input Type	Standard
Gate Charge	65nC
Td (on/off) @ 25°C	7ns/100ns
Test Condition	800V, 8A, 10 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220 [K]
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT11F80B	Microsemi Corporation	MOSFET N-CH 800V 12A TO-247	Details
APT11F80S	Microsemi Corporation	MOSFET N-CH 800V 12A D3PAK	Details
APT11GF120BRDQ1G	Microsemi Corporation	IGBT 1200V 25A 156W TO247	Details
APT11GF120KRG	Microsemi Corporation	IGBT 1200V 25A 156W TO220	Details
APT11GP60BDQBG	Microsemi Corporation	IGBT 600V 41A 187W TO247	Details
APT11N80BC3G	Microsemi Corporation	MOSFET N-CH 800V 11A TO-247	Details
APT11N80KC3G	Microsemi Corporation	MOSFET N-CH 800V 11A TO-220	Details