IXRFSM12N100 - IXYS-RF

Part Number	IXRFSM12N100
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	1.05 Ohm @ 6A, 15V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2875pF @ 800V
FET Feature	-
Power Dissipation (Max)	940W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	16-SMPD
Package / Case	16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Weight	-
Country of Origin	-

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