MMIX1F160N30T - IXYS

Part Number	MMIX1F160N30T
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	102A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	570W (Tc)
Rds On (Max) @ Id, Vgs	20 mOhm @ 60A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SMPD
Package / Case	24-PowerSMD, 21 Leads
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MMIX1F132N50P3	IXYS	MOSFET N-CH 500V 63A SMPD	Details
MMIX1F160N30T	IXYS	MOSFET N-CH 300V 102A SMPD	Details
MMIX1F180N25T	IXYS	MOSFET N-CH 250V 130A SMPD	Details
MMIX1F210N30P3	IXYS	MOSFET N-CH 300V 108A MMIX	Details
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MMIX1F44N100Q3	IXYS	MOSFET N-CH 1000V 30A	Details
MMIX1F520N075T2	IXYS	MOSFET N-CH 75V 500A	Details