IXTR32P60P - IXYS

Part Number	IXTR32P60P
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	11100pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	310W (Tc)
Rds On (Max) @ Id, Vgs	385 mOhm @ 16A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	ISOPLUS247™
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTR102N65X2	IXYS	MOSFET N-CH 650V 54A ISOPLUS247	Details
IXTR120P20T	IXYS	MOSFET P-CH 200V 90A ISOPLUS247	Details
IXTR140P10T	IXYS	MOSFET P-CH 100V 90A ISOPLUS247	Details
IXTR16P60P	IXYS	MOSFET P-CH 600V 10A ISOPLUS247	Details
IXTR170P10P	IXYS	MOSFET P-CH 100V 108A ISOPLUS247	Details
IXTR200N10P	IXYS	MOSFET N-CH 100V 120A ISOPLUS247	Details
IXTR20P50P	IXYS	MOSFET P-CH 500V 13A ISOPLUS247	Details
IXTR210P10T	IXYS	MOSFET P-CH 100V 158A ISOPLUS247	Details
IXTR30N25	IXYS	MOSFET N-CH 250V 25A ISOPLUS247	Details
IXTR32P60P	IXYS	MOSFET P-CH 600V 18A ISOPLUS247	Details