IXTB62N50L - IXYS

Part Number	IXTB62N50L
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	550nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	11500pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	800W (Tc)
Rds On (Max) @ Id, Vgs	100 mOhm @ 31A, 20V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	IXTB30N100L	IXYS	MOSFET N-CH 1000V 30A PLUS264	Details
	IXTB62N50L	IXYS	MOSFET N-CH 500V 62A PLUS264	Details