IXFX12N90Q - IXYS

Part Number	IXFX12N90Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	900 mOhm @ 6A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFX100N25	IXYS	MOSFET N-CH 250V 100A PLUS247	Details
IXFX100N65X2	IXYS	MOSFET N-CH 650V 100A PLUS247	Details
IXFX120N20	IXYS	MOSFET N-CH 200V 120A PLUS247	Details
IXFX120N25	IXYS	MOSFET N-CH 250V 120A PLUS247	Details
IXFX120N25P	IXYS	MOSFET N-CH 250V 120A PLUS247	Details
IXFX120N30P3	IXYS	MOSFET N-CH 300V 120A TO-247	Details
IXFX120N30T	IXYS	MOSFET N-CH 300V 120A PLUS247	Details
IXFX120N65X2	IXYS	MOSFET N-CH 650V 120A PLUS247	Details
IXFX12N90Q	IXYS	MOSFET N-CH 900V 12A PLUS247	Details
IXFX140N25T	IXYS	MOSFET N-CH 250V 140A PLUS247	Details