IXFP26N30X3 - IXYS

Part Number	IXFP26N30X3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	66 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.465nF @ 25V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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IXFP110N15T2	IXYS	MOSFET N-CH 150V 110A TO-220	Details
IXFP12N50P	IXYS	MOSFET N-CH 500V 12A TO-220	Details
IXFP12N50PM	IXYS	MOSFET N-CH 500V 6A TO-220	Details
IXFP12N65X2	IXYS	MOSFET N-CH	Details
IXFP130N10T	IXYS	MOSFET N-CH 100V 130A TO-220	Details
IXFP130N10T2	IXYS	MOSFET N-CH 100V 130A TO-220	Details
IXFP130N15X3	IXYS	MOSFET N-CH	Details