IXFP12N50P - IXYS

Part Number	IXFP12N50P
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1830pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Rds On (Max) @ Id, Vgs	500 mOhm @ 6A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFP102N15T	IXYS	MOSFET N-CH 150V 102A TO-220	Details
IXFP10N60P	IXYS	MOSFET N-CH 600V 10A TO-220	Details
IXFP10N80P	IXYS	MOSFET N-CH 800V 10A TO-220	Details
IXFP110N15T2	IXYS	MOSFET N-CH 150V 110A TO-220	Details
IXFP12N50P	IXYS	MOSFET N-CH 500V 12A TO-220	Details
IXFP12N50PM	IXYS	MOSFET N-CH 500V 6A TO-220	Details
IXFP12N65X2	IXYS	MOSFET N-CH	Details
IXFP130N10T	IXYS	MOSFET N-CH 100V 130A TO-220	Details
IXFP130N10T2	IXYS	MOSFET N-CH 100V 130A TO-220	Details
IXFP130N15X3	IXYS	MOSFET N-CH	Details