IXFM35N30 - IXYS

Part Number	IXFM35N30
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 25V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-204AE
Package / Case	TO-204AE
Weight	-
Country of Origin	-

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