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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IXCY01N90E
IXCY01N90E

IXCY01N90E - IXYS

Part Number
IXCY01N90E
Manufacturer
IXYS
Brief Description
MOSFET N-CH 900V 0.25A TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXCY01N90E PDF online browsing
Datasheet PDF Download
IXCY01N90E.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4403 pcs
Reference Price
USD 0/pcs
Our Price
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IXCY01N90E Detailed Description

Part Number IXCY01N90E
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 250mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 133pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 80 Ohm @ 50mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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