SPP08N50C3XKSA1 - Infineon Technologies

Part Number	SPP08N50C3XKSA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SPP08N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 7.6A TO-220AB	Details
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SPP08N80C3XK	Infineon Technologies	MOSFET N-CH 800V 8A TO-220AB	Details
SPP08N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 8A TO-220AB	Details
SPP08P06	INF	SPP08P06 INF TO-220 New Original Stocks	Details
SPP08P06P	ORIGINAL	SPP08P06P ORIGINAL TO220 New Original Stocks	Details
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SPP08P06PH	I	SPP08P06PH I TO-220.. New Original Stocks	Details
SPP08P06PHXKSA1	Infineon Technologies	MOSFET P-CH 60V 8.8A TO-220	Details