SPN02N60C3 E6433 - Infineon Technologies

Part Number	SPN02N60C3 E6433
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 1.1A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SPN02N60C3	Infineon Technologies	MOSFET N-CH 650V 0.4A SOT-223	Details
SPN02N60C3 E6433	Infineon Technologies	MOSFET N-CH 650V 0.4A SOT-223	Details
SPN02N60S5	Infineon Technologies	MOSFET N-CH 600V 0.4A SOT-223	Details