• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - RF › PTAB182002FCV1R0XTMA1
PTAB182002FCV1R0XTMA1

PTAB182002FCV1R0XTMA1 - Infineon Technologies

Part Number
PTAB182002FCV1R0XTMA1
Manufacturer
Infineon Technologies
Brief Description
IC RF FET LDMOS 190W H-37248-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
PTAB182002FCV1R0XTMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
315 pcs
Reference Price
USD 84.6496/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for PTAB182002FCV1R0XTMA1

PTAB182002FCV1R0XTMA1 Detailed Description

Part Number PTAB182002FCV1R0XTMA1
Part Status Active
Transistor Type LDMOS
Frequency 1.88GHz
Gain 15.5dB
Voltage - Test 28V
Current Rating 10µA
Noise Figure -
Current - Test 520mA
Power - Output 29W
Voltage - Rated 65V
Package / Case H-37248-4
Supplier Device Package H-37248-4
Weight -
Country of Origin -

RELATED PRODUCTS FOR PTAB182002FCV1R0XTMA1

Image Part Number Manufacturers Description View
PTAB182002FC-V1-R0 PTAB182002FC-V1-R0 Cree/Wolfspeed IC RF FET LDMOS 190W H-37248-4 Details
PTAB182002FC-V1-R250 PTAB182002FC-V1-R250 Cree/Wolfspeed IC AMP RF LDMOS Details
PTAB182002FCV1R0XTMA1 PTAB182002FCV1R0XTMA1 Infineon Technologies IC RF FET LDMOS 190W H-37248-4 Details
PTAB182002FCV1R250XTMA1 PTAB182002FCV1R250XTMA1 Infineon Technologies IC AMP RF LDMOS Details
PTAB182002TCV2R250XTMA1 PTAB182002TCV2R250XTMA1 Infineon Technologies IC RF FET LDMOS 190W H-49248H-4 Details
PTAB182002TCV2R250XUMA1 PTAB182002TCV2R250XUMA1 Infineon Technologies IC AMP RF LDMOS Details
PTAB182002TCV2XWSA1 PTAB182002TCV2XWSA1 Infineon Technologies IC RF FET LDMOS 190W H-49248H-4 Details