IRF100P219XKMA1 Detailed Description
Part Number |
IRF100P219XKMA1 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
- |
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
Rds On (Max) @ Id, Vgs |
1.7 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id |
3.8V @ 278µA |
Gate Charge (Qg) (Max) @ Vgs |
270nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
12020pF @ 50V |
FET Feature |
- |
Power Dissipation (Max) |
341W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247AC |
Package / Case |
TO-247-3 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR IRF100P219XKMA1