| Part Number | IPU60R1K5CEAKMA2 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO251 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPU60R1K0CEAKMA1 | Infineon Technologies | MOSFET N-CH 600V TO-251-3 | Details |
|
IPU60R1K0CEAKMA2 | Infineon Technologies | MOSFET N-CH 600V 4.3A TO-251-3 | Details |
|
IPU60R1K0CEBKMA1 | Infineon Technologies | MOSFET N-CH 600V TO-251-3 | Details |
|
IPU60R1K4C6AKMA1 | Infineon Technologies | MOSFET N-CH 600V TO-251-3 | Details |
|
IPU60R1K4C6BKMA1 | Infineon Technologies | MOSFET NCH 600V 3.2A TO251 | Details |
|
IPU60R1K5CEAKMA1 | Infineon Technologies | MOSFET N-CH 600V TO-251-3 | Details |
|
IPU60R1K5CEAKMA2 | Infineon Technologies | MOSFET N-CH 600V 3.1A TO-251-3 | Details |
|
IPU60R1K5CEBKMA1 | Infineon Technologies | MOSFET N-CH 600V TO-251-3 | Details |
|
IPU60R2K0C6AKMA1 | Infineon Technologies | MOSFET N-CH 600V TO-251 | Details |
|
IPU60R2K0C6BKMA1 | Infineon Technologies | MOSFET N-CH 600V 2.4A TO-251 | Details |
