IPU60R1K0CEAKMA1 - Infineon Technologies

Part Number	IPU60R1K0CEAKMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 100V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	1 Ohm @ 1.5A, 10V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPU60R1K0CEAKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3	Details
IPU60R1K0CEAKMA2	Infineon Technologies	MOSFET N-CH 600V 4.3A TO-251-3	Details
IPU60R1K0CEBKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3	Details
IPU60R1K4C6AKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3	Details
IPU60R1K4C6BKMA1	Infineon Technologies	MOSFET NCH 600V 3.2A TO251	Details
IPU60R1K5CEAKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3	Details
IPU60R1K5CEAKMA2	Infineon Technologies	MOSFET N-CH 600V 3.1A TO-251-3	Details
IPU60R1K5CEBKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3	Details
IPU60R2K0C6AKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251	Details
IPU60R2K0C6BKMA1	Infineon Technologies	MOSFET N-CH 600V 2.4A TO-251	Details