IPN60R2K1CEATMA1 Detailed Description
| Part Number |
IPN60R2K1CEATMA1 |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
600V |
| Current - Continuous Drain (Id) @ 25°C |
3.7A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs(th) (Max) @ Id |
3.5V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs |
6.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
140pF @ 100V |
| Vgs (Max) |
±20V |
| FET Feature |
Super Junction |
| Power Dissipation (Max) |
5W (Tc) |
| Rds On (Max) @ Id, Vgs |
2.1 Ohm @ 800mA, 10V |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-SOT223 |
| Package / Case |
SOT-223-3 |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR IPN60R2K1CEATMA1
