| Part Number | IPD65R250C6XTMA1 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 16.1A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 400µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 208.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 4.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPD65R190C7ATMA1 | Infineon Technologies | MOSFET N-CH 650V 13A TO-252 | Details |
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IPD65R1K0CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V TO-252 | Details |
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IPD65R1K4C6ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
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IPD65R1K4CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 2.8A TO-252 | Details |
 |
IPD65R1K4CFDATMA2 | Infineon Technologies | LOW POWERLEGACY | Details |
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IPD65R1K4CFDBTMA1 | Infineon Technologies | MOSFET N-CH 650V 2.8A TO-252 | Details |
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IPD65R1K5CEAUMA1 | Infineon Technologies | MOSFET N-CH TO-252-3 | Details |
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IPD65R225C7ATMA1 | Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | Details |
|
IPD65R250C6XTMA1 | Infineon Technologies | MOSFET N-CH 650V 16.1A TO-252 | Details |
|
IPD65R250E6XTMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
