| Part Number | IPD30N06S215ATMA2 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1485pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IPD30N03S2L-07 | infineon | IPD30N03S2L-07 infineon TO-252 New Original Stocks | Details |
|
IPD30N03S2L07ATMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Details |
|
IPD30N03S2L10ATMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Details |
|
IPD30N03S2L20ATMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Details |
|
IPD30N03S4L-09 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Details |
|
IPD30N03S4L09ATMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Details |
|
IPD30N03S4L14ATMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Details |
|
IPD30N06S2-15 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Details |
|
IPD30N06S215ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Details |
|
IPD30N06S223ATMA1 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Details |
