| Part Number | IPC302N12N3X1SA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 10V |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sawn on foil |
| Package / Case | Die |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPC302N08N3X1SA1 | Infineon Technologies | MOSFET N-CH 80V BARE DIE | Details |
|
IPC302N08N3X2SA1 | Infineon Technologies | MOSFET N-CH 80V SAWN WAFER | Details |
|
IPC302N10N3X1SA1 | Infineon Technologies | MOSFET N-CH 100V BARE DIE | Details |
|
IPC302N12N3X1SA1 | Infineon Technologies | MOSFET N-CH 120V BARE DIE | Details |
|
IPC302N15N3X1SA1 | Infineon Technologies | MOSFET N-CH 150V BARE DIE | Details |
|
IPC302N15N3X7SA1 | Infineon Technologies | MV POWER MOS | Details |
|
IPC302N20N3X1SA1 | Infineon Technologies | MOSFET N-CH 200V BARE DIE | Details |
|
IPC302N20NFDX1SA1 | Infineon Technologies | MOSFET N-CH 200V BARE DIE | Details |
|
IPC302N25N3AX1SA1 | Infineon Technologies | MOSFET N-CH 250V BARE DIE | Details |
|
IPC302N25N3X1SA1 | Infineon Technologies | MOSFET N-CH 250V BARE DIE | Details |
