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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IPB65R190CFDATMA1
IPB65R190CFDATMA1

IPB65R190CFDATMA1 - Infineon Technologies

Part Number
IPB65R190CFDATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V 17.5A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPB65R190CFDATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
96327 pcs
Reference Price
USD 1.70925/pcs
Our Price
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IPB65R190CFDATMA1 Detailed Description

Part Number IPB65R190CFDATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 100V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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