| Part Number | IPB65R110CFDAATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPB65R045C7ATMA1 | Infineon Technologies | MOSFET N-CH 650V 46A TO-263-3 | Details |
|
IPB65R045C7ATMA2 | Infineon Technologies | MOSFET N-CH 650V 46A TO-263-3 | Details |
|
IPB65R065C7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Details |
|
IPB65R065C7ATMA2 | Infineon Technologies | MOSFET N-CH TO263-3 | Details |
|
IPB65R095C7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Details |
|
IPB65R095C7ATMA2 | Infineon Technologies | MOSFET N-CH TO263-3 | Details |
|
IPB65R099C6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 38A TO263 | Details |
|
IPB65R110CFD | Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | Details |
|
IPB65R110CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Details |
|
IPB65R110CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | Details |
