IPB015N04LGATMA1

IPB015N04LGATMA1 - Infineon Technologies

Part Number
IPB015N04LGATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 40V 120A TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPB015N04LGATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
72705 pcs
Reference Price
USD 2.26457/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for IPB015N04LGATMA1

IPB015N04LGATMA1 Detailed Description

Part Number IPB015N04LGATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 346nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

RELATED PRODUCTS FOR IPB015N04LGATMA1