FF200R17KE3HOSA1 - Infineon Technologies

Part Number	FF200R17KE3HOSA1
Part Status	Active
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1700V
Current - Collector (Ic) (Max)	310A
Power - Max	1250W
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 200A
Current - Collector Cutoff (Max)	3mA
Input Capacitance (Cies) @ Vce	18nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FF200R06KE3HOSA1	Infineon Technologies	IGBT MODULE 600V 200A	Details
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FF200R12KE3HOSA1	Infineon Technologies	IGBT MODULE VCES 1200V 200A	Details
FF200R12KE4HOSA1	Infineon Technologies	IGBT MODULE 1200V 200A	Details
FF200R12KE4PHOSA1	Infineon Technologies	MOD IGBT MED PWR 62MM-1	Details
FF200R12KS4	INFINEON	FF200R12KS4 INFINEON SMD or Through Hole New Original Stocks	Details
FF200R12KS4HOSA1	Infineon Technologies	IGBT MODULE VCES 1200V 200A	Details
FF200R12KS4PHOSA1	Infineon Technologies	MOD IGBT MED PWR 62MM-1	Details
FF200R12KT3	INFINEON	FF200R12KT3 INFINEON SMD or Through Hole New Original Stocks	Details