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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Modules › FD900R12IP4DVBOSA1
FD900R12IP4DVBOSA1

FD900R12IP4DVBOSA1 - Infineon Technologies

Part Number
FD900R12IP4DVBOSA1
Manufacturer
Infineon Technologies
Brief Description
IGBT MODULE VCES 1200V 900A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FD900R12IP4DVBOSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
325 pcs
Reference Price
USD 505.68/pcs
Our Price
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FD900R12IP4DVBOSA1 Detailed Description

Part Number FD900R12IP4DVBOSA1
Part Status Active
IGBT Type Trench Field Stop
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 900A
Power - Max 5100W
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 54nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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FD900R12IP4DBOSA1 FD900R12IP4DBOSA1 Infineon Technologies IGBT MODULE VCES 1200V 900A Details
FD900R12IP4DVBOSA1 FD900R12IP4DVBOSA1 Infineon Technologies IGBT MODULE VCES 1200V 900A Details