DF200R12W1H3FB11BOMA1

DF200R12W1H3FB11BOMA1 - Infineon Technologies

Part Number
DF200R12W1H3FB11BOMA1
Manufacturer
Infineon Technologies
Brief Description
MOD DIODE BRIDGE EASY1B-2-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DF200R12W1H3FB11BOMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
1987 pcs
Reference Price
USD 82.7575/pcs
Our Price
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DF200R12W1H3FB11BOMA1 Detailed Description

Part Number DF200R12W1H3FB11BOMA1
Part Status Active
IGBT Type Trench Field Stop
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 30A
Power - Max 20mW
Vce(on) (Max) @ Vge, Ic 1.45V @ 15V, 30A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 6.15nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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