| Part Number | BSZ100N06LS3 G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 20A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 23µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8 |
| Package / Case | 8-PowerVDFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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BSZ100N03LSG | INFINEON | BSZ100N03LSG INFINEON QFN New Original Stocks | Details |
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BSZ100N03LSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 | Details |
|
BSZ100N03MSG | INFINEON | BSZ100N03MSG INFINEON QFN New Original Stocks | Details |
|
BSZ100N03MSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 40A TDSON-8 | Details |
|
BSZ100N06LS3 G | Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | Details |
|
BSZ100N06LS3G | INFINEON | BSZ100N06LS3G INFINEON QFN New Original Stocks | Details |
|
BSZ100N06LS3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | Details |
 |
BSZ100N06NSATMA1 | Infineon Technologies | MOSFET N-CH 60V 40A 8TSDSON | Details |
|
BSZ105N04NS G | Infineon Technologies | MOSFET N-CH 40V 40A TSDSON-8 | Details |
|
BSZ105N04NSG | INFINEON | BSZ105N04NSG INFINEON QFN New Original Stocks | Details |
