BSM75GB170DN2HOSA1

BSM75GB170DN2HOSA1 - Infineon Technologies

Part Number
BSM75GB170DN2HOSA1
Manufacturer
Infineon Technologies
Brief Description
IGBT 1700V 110A 625W MODULE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSM75GB170DN2HOSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
847 pcs
Reference Price
USD 0/pcs
Our Price
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BSM75GB170DN2HOSA1 Detailed Description

Part Number BSM75GB170DN2HOSA1
Part Status Obsolete
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 110A
Power - Max 625W
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Current - Collector Cutoff (Max) -
Input Capacitance (Cies) @ Vce 11nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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