BSF134N10NJ3GXUMA1 - Infineon Technologies

Part Number	BSF134N10NJ3GXUMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	13.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.2W (Ta), 43W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	BSF134N10NJ3 G	Infineon Technologies	MOSFET N-CH 100V 9A WDSON-2	Details
	BSF134N10NJ3GXUMA1	Infineon Technologies	MOSFET N-CH 100V 9A WDSON-2	Details