MBR200200CTR - GeneSiC Semiconductor

Part Number	MBR200200CTR
Part Status	Active
Diode Configuration	1 Pair Common Anode
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io) (per Diode)	100A
Voltage - Forward (Vf) (Max) @ If	920mV @ 100A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	3mA @ 200V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Supplier Device Package	Twin Tower
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MBR200100	MCC	200 Amp Rectifier 20 to 100 Volts Schottky Barrier	Details
MBR200100CT	GeneSiC Semiconductor	DIODE MODULE 100V 200A 2TOWER	Details
MBR200100CTR	GeneSiC Semiconductor	DIODE MODULE 100V 200A 2TOWER	Details
MBR200100CTS	GeneSiC Semiconductor	DIODE MODULE 100V 200A SOT227	Details
MBR200150CT	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 100A 2 TOWER	Details
MBR200150CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 100A 2 TOWER	Details
MBR20020	MCC	200 Amp Rectifier 20 to 100 Volts Schottky Barrier	Details
MBR200200CT	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 100A 2 TOWER	Details
MBR200200CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 100A 2 TOWER	Details
MBR20020CT	GeneSiC Semiconductor	DIODE MODULE 20V 200A 2TOWER	Details