GC08MPS12-252 - GeneSiC Semiconductor

Part Number	GC08MPS12-252
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	40A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8V @ 8A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	7µA @ 1200V
Capacitance @ Vr, F	545pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252-2
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	GC08MPS12-220	GeneSiC Semiconductor	SIC DIODE 1200V 8A TO-220-2	Details
	GC08MPS12-252	GeneSiC Semiconductor	SIC DIODE 1200V 8A TO-252-2	Details