GA20SICP12-247 Detailed Description
Part Number |
GA20SICP12-247 |
Part Status |
Active |
FET Type |
- |
Technology |
SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) |
1200V |
Current - Continuous Drain (Id) @ 25°C |
45A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
- |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
3091pF @ 800V |
Vgs (Max) |
- |
FET Feature |
- |
Power Dissipation (Max) |
282W (Tc) |
Rds On (Max) @ Id, Vgs |
50 mOhm @ 20A |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247AB |
Package / Case |
TO-247-3 |
Weight |
- |
Country of Origin |
- |
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