GA20JT12-247 - GeneSiC Semiconductor

Part Number	GA20JT12-247
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	282W (Tc)
Rds On (Max) @ Id, Vgs	70 mOhm @ 20A
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AB
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GA200	MMC	GA200 MMC DIP10 New Original Stocks	Details
GA200-001PD	TE Connectivity Measurement Specialties	SENSOR TRANSDUCER 0.250-4.5V PCB	Details
GA200-005WD	TE Connectivity Measurement Specialties	SENSOR PRESS GAUGE 5" H2O 3SIP	Details
GA200-010WD	TE Connectivity Measurement Specialties	SENSOR PRESS DIFF 10" H2O 3SIP	Details
GA200-015WD	TE Connectivity Measurement Specialties	SENSOR PRESS GAUGE 15" H2O 3SIP	Details
GA200NS61U	IR	GA200NS61U IR SMD or Through Hole New Original Stocks	Details
GA200SA60S	Vishay Semiconductor Diodes Division	IGBT STD 600V 100A SOT227	Details
GA200SA60U	Vishay Semiconductor Diodes Division	IGBT UFAST 600V 100A SOT227	Details
GA201	ORIGINAL	GA201 ORIGINAL SMD or Through Hole New Original Stocks	Details
GA201AE3	Microsemi Corporation	SCR	Details