GA03JT12-247 - GeneSiC Semiconductor

Part Number	GA03JT12-247
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	3A (Tc) (95°C)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	15W (Tc)
Rds On (Max) @ Id, Vgs	460 mOhm @ 3A
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AB
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	GA037B	VHK	GA037B VHK DIP48 New Original Stocks	Details
	GA03JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 3A TO-247AB	Details