GA03JT12-247 Detailed Description
| Part Number |
GA03JT12-247 |
| Part Status |
Active |
| FET Type |
- |
| Technology |
SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) |
1200V |
| Current - Continuous Drain (Id) @ 25°C |
3A (Tc) (95°C) |
| Drive Voltage (Max Rds On,Min Rds On) |
- |
| Vgs(th) (Max) @ Id |
- |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| Vgs (Max) |
- |
| FET Feature |
- |
| Power Dissipation (Max) |
15W (Tc) |
| Rds On (Max) @ Id, Vgs |
460 mOhm @ 3A |
| Operating Temperature |
175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247AB |
| Package / Case |
TO-247-3 |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR GA03JT12-247
