IRF630B_FP001

IRF630B_FP001 - Fairchild/ON Semiconductor

Part Number
IRF630B_FP001
Manufacturer
Fairchild/ON Semiconductor
Brief Description
MOSFET N-CH 200V 9A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRF630B_FP001 PDF online browsing
Datasheet PDF Download
IRF630B_FP001.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3847 pcs
Reference Price
USD 0/pcs
Our Price
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IRF630B_FP001 Detailed Description

Part Number IRF630B_FP001
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Weight -
Country of Origin -

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