FQU2N50BTU_WS - Fairchild/ON Semiconductor

Part Number	FQU2N50BTU_WS
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs	5.3 Ohm @ 800mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQU2N100	FAIRCHILD	FQU2N100 FAIRCHILD TO-251 New Original Stocks	Details
FQU2N100TU	Fairchild/ON Semiconductor	MOSFET N-CH 1000V 1.6A IPAK	Details
FQU2N50BTU	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.6A IPAK	Details
FQU2N50BTU-WS	ON Semiconductor	MOSFET N-CH 500V 1.6A IPAK	Details
FQU2N50BTU_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.6A IPAK	Details
FQU2N60-NL	FSC	FQU2N60-NL FSC TO-251 New Original Stocks	Details
FQU2N60B	FSC	FQU2N60B FSC TO-251 New Original Stocks	Details
FQU2N60C	ORIGINAL	FQU2N60C ORIGINAL SOT-25.. New Original Stocks	Details
FQU2N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1.9A IPAK	Details
FQU2N60TU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2A IPAK	Details