EPC2019

EPC2019 - EPC

Part Number
EPC2019
Manufacturer
EPC
Brief Description
TRANS GAN 200V 8.5A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
EPC2019 PDF online browsing
Datasheet PDF Download
EPC2019.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
67500 pcs
Reference Price
USD 1.9404/pcs
Our Price
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EPC2019 Detailed Description

Part Number EPC2019
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V
Vgs (Max) +6V, -4V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 50 mOhm @ 7A, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Weight -
Country of Origin -

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