ZXMP10A18KTC - Diodes Incorporated

Part Number	ZXMP10A18KTC
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1055pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.17W (Ta)
Rds On (Max) @ Id, Vgs	150 mOhm @ 2.8A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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ZXMP10A17GQTA	Diodes Incorporated	MOSFET P-CH 100V SOT223	Details
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ZXMP10A17GTA	Diodes Incorporated	MOSFET P-CH 100V 1.7A SOT223	Details
ZXMP10A17KTC	Diodes Incorporated	MOSFET P-CH 100V 2.4A DPAK	Details