ZXMP10A17GQTC - Diodes Incorporated

Part Number	ZXMP10A17GQTC
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	424pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	450 mOhm @ 1.2A, 6V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
ZXMP10A13FQTA	Diodes Incorporated	MOSFET P-CH 100V 0.6A SOT23-3	Details
ZXMP10A13FTA	Diodes Incorporated	MOSFET P-CH 100V 0.6A SOT23-3	Details
ZXMP10A16KTC	Diodes Incorporated	MOSFET P-CH 100V 3A DPAK	Details
ZXMP10A17E6	DIODES	ZXMP10A17E6 DIODES TSOP-6 New Original Stocks	Details
ZXMP10A17E6QTA	Diodes Incorporated	MOSFET P-CH 100V 1.3A SOT23-6	Details
ZXMP10A17E6TA	Diodes Incorporated	MOSFET P-CH 100V 1.3A SOT23-6	Details
ZXMP10A17GQTA	Diodes Incorporated	MOSFET P-CH 100V SOT223	Details
ZXMP10A17GQTC	Diodes Incorporated	MOSFET PCH 100V 1.7A SOT223	Details
ZXMP10A17GTA	Diodes Incorporated	MOSFET P-CH 100V 1.7A SOT223	Details
ZXMP10A17KTC	Diodes Incorporated	MOSFET P-CH 100V 2.4A DPAK	Details